RGW50TK65D
超高速開關型, 650V 18A, 內建快速回復二極體, TO-3PFM, 場截止溝槽型IGBT
RGW50TK65D
RGW50TK65D
超高速開關型, 650V 18A, 內建快速回復二極體, TO-3PFM, 場截止溝槽型IGBT
The datasheet is coming soon.
Product Detail
規格:
Series
W: High speed fast SW
VCES [V]
650
IC(100°C)[A]
18
VCE(sat) (Typ.) [V]
1.5
tf(Typ.) [ns]
53
Built-in Diode
FRD
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
功能:
- Low Collector - Emitter Saturation Voltage
- High Speed Switching
- Low Switching Loss & Soft Switching
- Built in Very Fast & Soft Recovery FRD
- Pb - free Lead Plating ; RoHS Compliant
