RGT8NS65D(LPDS)
短路耐量 5µs, 650V 4A, 內建快速回復二極體, LPDS, 場截止溝槽型IGBT
新設計不推薦
RGT8NS65D(LPDS)
短路耐量 5µs, 650V 4A, 內建快速回復二極體, LPDS, 場截止溝槽型IGBT
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Description
為了既有客戶所需而生產的產品。對於新設計則不予販售。
Product Detail
Specifications
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
4
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
71
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
65
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
13.1x10.1 (t=4.7)
Features
1) Low Collector - Emitter Saturation Voltage2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
