GNP2130TEC-Z
EcoGaN™, 650V 14.5A DFN8080CK, E-mode 氮化鎵 (GaN) HEMT
新設計不推薦
GNP2130TEC-Z
EcoGaN™, 650V 14.5A DFN8080CK, E-mode 氮化鎵 (GaN) HEMT
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Description
為了既有客戶所需而生產的產品。對於新設計則不予販售。
Product Detail
Specifications
VDS [V]
650
IDS [A]
14.5
VGS Rating [V]
6.5
RDS(on) [mΩ]
130
Qg [nC]
2.8
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
8.0x8.0 (t=1.0)
Features
- 650V E-mode GaN HEMT
- 130mΩ 電阻
- 2.8nC 閘極電荷
Reference Design / Evaluation Tool
-
- Evaluation Board - GNP2130TEC-1-EVK-001
In order to take advantage of good switching performance and heat dissipation for GaN power devices, it is necessary to evaluate them under various drive conditions, but these evaluations are not easy. The EVK has been released to evaluate the switching performance.
