R6030ENZ
低雜訊規格 Nch 600V 30A 功率MOSFET
R6030ENZ
低雜訊規格 Nch 600V 30A 功率MOSFET
R6xxxENx系列是重視易用性，以低雜訊性能為特點的Super Junction MOSFET產品。該系列產品可在音響和照明等需要盡可能抑制雜訊的應用中實現最佳性能。
Product Detail
規格:
Package Code
TO-3PF
Applications
Power Supply
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
600
Drain Current ID[A]
30
RDS(on)[Ω] VGS=10V(Typ)
0.115
RDS(on)[Ω] VGS=Drive (Typ)
0.115
Total gate charge Qg[nC]
85
Power Dissipation (PD)[W]
120
Drive Voltage[V]
10
Trr (Typ)[ns]
660
Mounting Style
Leaded type
Bare Die Part Number
Available: K7407
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
26.5x15.5 (t=5.7)
功能:
- Low on-resistance
- Fast switching speed
- Gate-source voltage (VGSS) guaranteed to be ±20V
- Drive circuits can be simple
- Parallel use is easy
- Pb-free lead plating ; RoHS compliant
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