新設計不推薦
SCS306AP
Silicon carbide Schottky Barrier Diode
SCS306AP
新設計不推薦
SCS306AP
Silicon carbide Schottky Barrier Diode
為了既有客戶所需而生產的產品。對於新設計則不予販售。
Product Detail
規格:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
6
Generation
3rd Gen
Total Power Dissipation[W]
46
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.6x10.2 (t=4.7)
功能:
- Shorter recovery time
- Reduced temperature dependence
- High-speed switching possible
- High surge current capability
