SCS215AN (新產品)
650V, 15A, SMD, Silicon-carbide (SiC) SBD
SCS215AN
SCS215AN (新產品)
650V, 15A, SMD, Silicon-carbide (SiC) SBD
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Product Detail
規格:
Grade
Standard
Reverse Voltage[V]
650
Continuous Forward Current[A]
15
Generation
2nd Gen
Total Power Dissipation[W]
107
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.1x10.1 (t=4.7)
功能:
- Low forward voltage
- Negligible recovery time/current
- Temperature independent switching behavior
- Wide creepage distance = min. 5.10mm
Videos & Catalogs
影片一覽
寬沿面距離封裝 SiC蕭特基二極體 - SCS2xxAN (650V), SCS2xxKN (1,200V)
2024-11-12 00:00:00.0
( 1.16 MB )
SCS2xxAN（650V）和SCS2xxKN（1,200V）是採用小型表面安裝封裝、實現了寬沿面距離的SiC蕭特基二極體。雖為小型表面安裝封裝，但透過確保足夠的沿面距離，可減輕採取特殊絕緣對策（灌膠封裝 Potting）的負擔。
SCS2xxAN（650V）和SCS2xxKN（1,200V）是採用小型表面安裝封裝、實現了寬沿面距離的SiC蕭特基二極體。雖為小型表面安裝封裝，但透過確保足夠的沿面距離，可減輕採取特殊絕緣對策（灌膠封裝 Potting）的負擔。