S6604
1200V, 20A, SiC (碳化矽) SBD裸晶Quick Download
S6604
Description
S6604為SiC(碳化矽)外延平面型蕭特基二極體，可降低切換損耗，實現高速切換操作。
若需購買裸晶，請洽詢我方業務窗口確認規格。目前，我方未於網路經銷商販售裸晶。
Product Detail
Specifications
Reverse Voltage[V]
1200
Continuous Forward Current[A]
20
Generation
3rd Gen
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features
- 低正向電壓
- 恢復時間/電流微不足道
- 切換特性與溫度無關
- 高突波電流承受能力
