BSM180D12P2C101
SiC功率模組
BSM180D12P2C101
SiC功率模組
使用ROHM公司生產SiC-DMOSFET的半橋構成SiC MOSFET模組。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain Current[A]
204
Total Power Dissipation[W]
1360
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Half bridge
Package Size [mm]
122.0x45.6 (t=17.5)
功能:
・SiC MOSFET-only power module・High-speed switching and low switching loss
・Ensured reliability of body diode conduction
・Low body diode Qrr and trr
參考設計 / 應用評估套件
-
- Drive Board - BSMGD3C12D24-EVK001
This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
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- Snubber Module - MGSM1D72J2-145MH26
Snubber Module for BSM series (1200V, C type)
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- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)