SiC（碳化矽）功率模組 - BSM180C12P2E202
BSM180C12P2E202由羅姆公司生產的SiC-DMOSFET和SiC-SBD構成，是2in1的SiC功率模組。
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規格:
Drain-source Voltage[V]
1200
Drain Current[A]
204.0
Total Power Dissipation[W]
1360
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Chopper
功能:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.