BSM120C12P2C201
SiC(碳化矽)功率模組
BSM120C12P2C201
SiC(碳化矽)功率模組
本品是使用ROHM生產的SiC-DMOSFET和SiC蕭特基二極體的斬波結構的SiC MOSFET模組。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain Current[A]
134
Total Power Dissipation[W]
935
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package
Chopper
Package Size [mm]
122.0x45.6 (t=17.5)
功能:
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
參考設計 / 應用評估套件
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- Snubber Module - MGSM1D72J2-145MH26
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- Drive Board - TAMURA 2DU series
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