BSM120C12P2C201
SiC（碳化矽）功率模組
新設計不推薦
BSM120C12P2C201
SiC（碳化矽）功率模組
Quick Download
Description
為了既有客戶所需而生產的產品。對於新設計則不予販售。
Product Detail
Specifications
Drain-source Voltage[V]
1200
Drain Current[A]
134
Total Power Dissipation[W]
935
Junction Temperature (Max.) [℃]
175
Storage Temperature (Min.) [℃]
-40
Storage Temperature (Max.) [℃]
125
Package
Chopper
Package Size [mm]
122.0x45.6 (t=17.5)
Features
- Low surge, low switching loss.
- High-speed switching possible.
- Reduced temperature dependance.
Reference Design / Evaluation Tool
-
- Drive Board - BSMGD3C12D24-EVK001
This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.
-
- Snubber Module - MGSM1D72J2-145MH26
Snubber Module for BSM series (1200V, C type)
-
- Drive Board - TAMURA 2DU series
Drive Board for BSM series (1200V, C / E / G type)
