SCT4018KE
1200V, 81A, 3引腳THD, 溝槽結構, SiC MOSFET
SCT4018KE
SCT4018KE
1200V, 81A, 3引腳THD, 溝槽結構, SiC MOSFET
SCT4018KE是有助於應用產品實現小型化和更低功耗的SiC MOSFET。
ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受時間並實現了業界超低導通電阻的第4代產品。與以往產品相比,該系列產品的導通電阻降低了約40%,開關損耗降低了約50%。另外,該產品還支持更容易處理的15V柵-源電壓,使應用產品的設計更容易。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
18
Generation
4th Gen (Trench)
Drain Current[A]
81
Total Power Dissipation[W]
312
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
功能:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant