N-channel SiC 功率MOSFET - SCT3120AL
溝槽閘極構造的SiC-MOSFET。平面型SiC-MOSFET相比，同一芯片尺寸的導通電阻可降低50%，這將大幅降低太陽能發電用功率調節器和工業設備用電源、工業用逆變器等所有相關設備的功率損耗。
×
規格:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
120.0
Drain Current[A]
21.0
Total Power Dissipation[W]
103
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
功能:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant