SCT3120AL
N-channel SiC 功率MOSFET
SCT3120AL
N-channel SiC 功率MOSFET
溝槽閘極構造的SiC-MOSFET。平面型SiC-MOSFET相比，同一芯片尺寸的導通電阻可降低50%，這將大幅降低太陽能發電用功率調節器和工業設備用電源、工業用逆變器等所有相關設備的功率損耗。
Product Detail
規格:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
120
Generation
3rd Gen (Trench)
Drain Current[A]
21
Total Power Dissipation[W]
103
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
功能:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
