SCT3080KW7 (新產品)
1200V 30A, 7端子SMD, 溝槽結構, SiC-MOSFET

SCT3080KW7是1200V 30A的Nch SiC功率MOSFET。採用溝槽結構,降低了導通電阻。

Data Sheet 購買 *
* 本產品是標準級的產品。

Product Detail

料號 | SCT3080KW7TL
狀態 | 推薦品
封裝 | TO-263-7L
單位數量 | 1000
最小包裝數量 | 1000
包裝形式 | Taping
RoHS | Yes


Drain-source Voltage[V]


Drain-source On-state Resistance(Typ.)[mΩ]


Drain Current[A]


Total Power Dissipation[W]


Junction Temperature(Max.)[°C]


Storage Temperature (Min.)[°C]


Storage Temperature (Max.)[°C]


Package Size [mm]

10.2x9 (t=4.7)


  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Design Resources



White Paper

  • Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs
  • LEADRIVE: Design, Test and System Evaluation of Silicon Carbide Power Modules and Motor Control Units
  • Solving the challenges of driving SiC MOSFETs with new packaging developments

Application Note

  • Improvement of switching loss by driver source

Technical Articles

Schematic Design & Verification

  • [NEW]Application Note for SiC Power Devices and Modules
  • Calculating Power Loss from Measured Waveforms
  • Calculation of Power Dissipation in Switching Circuit
  • Precautions during gate-source voltage measurement for SiC MOSFET
  • Method for Monitoring Switching Waveform
  • Snubber circuit design methods for SiC MOSFET
  • Gate-source voltage behaviour in a bridge configuration
  • Gate-Source Voltage Surge Suppression Methods
  • Importance of Probe Calibration When Measuring Power: Deskew
  • Impedance Characteristics of Bypass Capacitor

Thermal Design

  • What Is Thermal Design
  • Basics of Thermal Resistance and Heat Dissipation
  • Method for Calculating Junction Temperature from Transient Thermal Resistance Data
  • Notes for Temperature Measurement Using Thermocouples
  • Two-Resistor Model for Thermal Simulation
  • Notes for Temperature Measurement Using Forward Voltage of PN Junction
  • What is a Thermal Model? (SiC Power Device)
  • How to Use Thermal Models
  • Measurement Method and Usage of Thermal Resistance RthJC
  • Precautions When Measuring the Rear of the Package with a Thermocouple



  • How to Create Symbols for PSpice Models
  • SCT3080KW7 PLECS Model
  • SCT3080KW7 SPICE Model

Packaging & Quality

Package Information

  • TO-263-7L Package Dimensions
  • TO-263-7L Inner Structure
  • TO-263-7L Taping Information
  • TO-263-7L Explanation for Marking
  • Moisture Sensitivity Level
  • Anti-Whisker formation
  • Condition of Soldering

Environmental Data

  • About Flammability of Materials
  • Compliance of the ELV directive
  • Report of SVHC under REACH Regulation

Export Information

  • About Export Administration Regulations (EAR)