SCT3040KRHR
1200V, 55A, 4引腳THD, 溝槽結構 車載SiC-MOSFET
SCT3040KRHR
SCT3040KRHR
1200V, 55A, 4引腳THD, 溝槽結構 車載SiC-MOSFET
SCT3040KRHR是一款1200V 55A的Nch SiC功率MOSFET。該產品採用溝槽結構實現了更低的導通電阻，是符合AEC-Q101標準的高可靠性車載級產品。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
40
Generation
3rd Gen (Trench)
Drain Current[A]
55
Total Power Dissipation[W]
262
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x23.45 (t=5.2)
Common Standard
AEC-Q101 (Automotive Grade)
功能:
- Qualified to AEC-Q101
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant
