SCT4062KW7
1200V, 24A, 7引腳SMD, 溝槽結構, SiC MOSFET
SCT4062KW7
1200V, 24A, 7引腳SMD, 溝槽結構, SiC MOSFET
SCT4062KW7是一款1200V、40A的Nch SiC功率MOSFET。該產品採用溝槽結構實現了更低的導通電阻,
ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受時間並實現了業界超低導通電阻的第4代產品。與以往產品相比,該系列產品的導通電阻降低了約40%,開關損耗降低了約50%。另外,該產品還支持更容易處理的15V柵-源電壓,使應用產品的設計更容易。
Product Detail
規格:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
62
Generation
4th Gen (Trench)
Drain Current[A]
24
Total Power Dissipation[W]
93
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.2x15.4 (t=4.7)
功能:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant