SCT4036KW7
1200V, 40A, 7引腳SMD, 溝槽結構, SiC MOSFET

SCT4036KW7是一款1200V、40A的Nch SiC功率MOSFET。該產品採用溝槽結構實現了更低的導通電阻，

ROHM的第4代SiC MOSFET
SCT4系列是改善了短路耐受時間並實現了業界超低導通電阻的第4代產品。與以往產品相比，該系列產品的導通電阻降低了約40%，開關損耗降低了約50%。另外，該產品還支持更容易處理的15V柵-源電壓，使應用產品的設計更容易。

Data Sheet 購買 *
* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買 *

Product Detail

 
料號 | SCT4036KW7TL
狀態 | 推薦品
封裝 | TO-263-7L
單位數量 | 1000
最小包裝數量 | 1000
包裝形式 | Taping
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain-source On-state Resistance(Typ.)[mΩ]

36

Generation

4th Gen (Trench)

Drain Current[A]

40

Total Power Dissipation[W]

150

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

175

Package Size [mm]

10.2x15.4 (t=4.7)

Find Similar

功能:

  • Low on-resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to drive
  • Pb-free lead plating ; RoHS compliant

Reference Design / Application Evaluation Kit

 
    • Evaluation Board - HB2637L-EVK-301

    • The evaluation board is configured in a half bridge set up and thus allows evaluations in different operations modes such as buck, boost, synchronous buck/boost and inverter operations. The board is equipped with two SiC MOSFETs(SCT4036KW7), isolated gate driver BM61S41RFV-C, isolated power supply required for the gate driver, LDO for 5V supply and easy to interface connectors for PWM signals.

    • User Guide
X

Most Viewed