LTR100JZPFL
High Power Chip Resistors
LTR100JZPFL
High Power Chip Resistors
ROHM的高功率晶片式電阻採用長邊電極構造，大幅提升了一般晶片式電阻的額定功率，且因電極間距縮短，會有較佳的接合可靠性。
Lineup
Product Detail
規格:
Automotive grade
Yes
Size[mm](inch)
3264(1225)
Rated Power[W]
3
Resistance Tolerance
F (±1%)
Resistance range[Ω]
0.1 to 0.91
Resistance(Min.)[Ω]
0.1
Resistance(Max.)[Ω]
0.91
Temperature Coefficient[ppm/°C]
0 to 150
Operating Temperature[°C]
-55 to 155
Type
For current sensing (Wide terminal)
Operating Temperature (Max.)[°C]
155
Common Standard
AEC-Q200 (Automotive Grade)
功能:
・額定功率大幅提升・對於溫度週期(cycle)也能保有良好的接合特性
參考設計 / 應用評估套件
-
- Evaluation Board - BM2SCQ123T-EVK-001
Built-in SiC MOSFET Isolation Fly-back Converter QR method Output 48 W 24 V
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- Evaluation Board - BM2SC123FP2-EVK-001
Built-in SiC MOSFET Isolated Fly-back Converter QR method Output 48 W 24 V
-
- Evaluation Board - BM2P10B1J-EVK-001
Flyback Type PWM Mode Isolated 12V 2.0A 24W
-
- Evaluation Board - BM2P13B1J-EVK-001
Flyback Type PWM Mode Isolated 12V 1.4A 16.8W
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- Reference Design - REFLD002
- Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .
- Enables high-speed driving of laser diodes - a key device in LiDAR applications
- Includes next-gen EcoGaN™ devices
- Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
- Two circuit types: square wave and resonant
