ROHM Product Detail

BV1LY010FPJ-M (開發中)

車電用IPD 1ch Low Side Switch
Data Sheet 購買
BV1LY010FPJ-M
(開發中)

BV1LY010FPJ-M (開發中)
車電用IPD 1ch Low Side Switch

BV1LY010FPJ-M是車電用1ch低側開關IC，內建Dual TSD®、OCP和主動鉗位功能。

Data Sheet 購買
Data Sheet 購買

Product Detail

 
料號 | BV1LY010FPJ-ME1
狀態 | 開發中
封裝 | TO252-J3
包裝形式 | Taping
單位數量 | 2000
最小包裝數量 | 2000
RoHS | Yes

功能安全:

類別 : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.
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規格:

Type

Low side switches

Generation

GEN2

Qualification Grade

AEC-Q100 (Automotive Grade)

Feature

Standard / Error Flag

Overcurrent Protection

Limitation

Thermal Shut Down

Self-restart

Channel Number [ch]

1

ON Resistance(Typ.)[mΩ]

10

ON Resistance(Max.)[mΩ]

25

DC Output Current @Ta=85℃ [A]

10.6

Supply Voltage(Min.)[V]

3.5

Supply Voltage(Max.)[V]

5.5

Drain-Source Voltage (Max.)[V]

38

Single Pulse Energy 25°C [mJ]

230

Over Current Limit (Min.)[A]

48

Under voltage Detection Level(Max.)[V]

3.5

Current consumption(Typ.)[µA]

85

Junction Temperature Tj (Min.)[°C]

-40

Junction Temperature Tj (Max.)[°C]

150

Package Size [mm]

6.6x10.1 (t=2.5)

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功能:

  • Dual TSD® (本IC具有熱關斷(接面溫度偵測)和ΔTj保護(功率MOS溫度陡升偵測)功能。)
  • AEC-Q100認證(等級1)
  • 內建過電流保護功能(OCP)
  • 內建主動鉗位功能
  • 可直接由CMOS邏輯IC等控制
  • 導通電阻RDS(ON) = 10mΩ (Typ) (VIN = 5V, IOUT = 2.4A, Tj = 25℃時)
  • 單晶片電源管理IC，控制區塊(CMOS)和功率MOS FET整合於單一晶片
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