ROHM Product Detail

BV1LB025FPJ-C
車用IPD 1ch 低側開關

BV1LB025FPJ-C是適用於12 V車電應用中的單通道低側開關IC。它內建了OCP、Dual TSD和主動鉗位功能。

Product Detail

 
料號 | BV1LB025FPJ-CE1
狀態 | 推薦品
封裝 | TO252-J3
包裝形式 | Taping
單位數量 | 2000
最小包裝數量 | 2000
RoHS | Yes

功能安全:

類別 : FS supportive
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the functional safety.

規格:

Type

Low side switches

Generation

GEN2

Qualification Grade

AEC-Q100 (Automotive Grade)

Feature

Standard / Error Flag

Overcurrent Protection

Limitation

Thermal Shut Down

Self-restart

Channel Number [ch]

1

ON Resistance(Typ.)[mΩ]

25

ON Resistance(Max.)[mΩ]

62.5

DC Output Current @Ta=85℃ [A]

6.7

Supply Voltage(Min.)[V]

3

Supply Voltage(Max.)[V]

5.5

Drain-Source Voltage (Max.)[V]

40

Single Pulse Energy 25°C [mJ]

450

Over Current Limit (Min.)[A]

27

Under voltage Detection Level(Max.)[V]

3

Current consumption(Typ.)[µA]

100

Junction Temperature Tj (Min.)[°C]

-40

Junction Temperature Tj (Max.)[°C]

150

Package Size [mm]

6.6x10.1 (t=2.5)

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功能:

  • 內建Dual TSD (本IC具備過熱關斷功能(接面溫度檢測)和ΔTj保護功能(功率MOS溫度驟升檢測)。)
  • AEC-Q100 合格 (Grade1)
  • 內建過電流保護功能 (OCP)
  • 內建主動鉗位功能
  • 可從CMOS邏輯IC等直接控制
  • 導通電阻 RDS(ON) = 25 mΩ (Typ)
    (VIN = 5 V、IOUT = 2.4 A、Tj = 25 ℃時)
  • 單晶片電源管理IC,其中控制區塊 (CMOS) 和功率MOS FET安裝在單個晶片上
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