BV2HD045EFU-C
半導體保險絲IPD
BV2HD045EFU-C
半導體保險絲IPD
本產品是利用獨家過電流保護功能，可獨立保護系統免受過電流影響的高側IPD。市場競品僅支援啟動時的突波電流保護，啟動後的穩態電流則使用微控制器和過電流檢測IC等進行過電流保護，但受到與IPD輸出端後段電路之間的相容性影響，有可能會發生異常的現象，而新產品則可以獨立保護系統免受突波電流和穩態電流中的過電流影響。與市場競品的解決方案相比，能提供可靠性更高、零件數量更少的解決方案，有助於打造更安全的系統。另外，過電流保護的範圍還可以利用外接零件自由調整，因此可運用於各種系統。
Product Detail
功能安全:
規格:
Generation
GEN2
Function
Variable Overcurrent Limit
Channel Number [ch]
2
Drain-Source Voltage (Max.)[V]
41
Output Current[A]
21
ON Resistance(Max.)[mΩ]
100
ON Resistance(Typ.)[mΩ]
45
Over Current Detect [A]
21
Active Clamp Energy [mJ]
35
UVLO Detection Voltage(Max.)[V]
4.3
Supply Voltage(Min.)[V]
6
Supply Voltage(Max.)[V]
28
Current consumption(Typ.)[µA]
6000
Thermal Shut Down
Self-restart
Open Load Detect [V]
3
Status Terminal
Available
Junction Temperature Tj (Min.)[°C]
-40
Junction Temperature Tj (Max.)[°C]
150
Package Size [mm]
4.9x6 (t=1.7)
Common Standard
AEC-Q100 (Automotive Grade)
功能:
- Dual TSD:This IC has thermal shutdown (Junction temperature detect) and ΔTj Protection (Power-MOS steep temperature rising detect).
- AEC-Q100 Qualified(Grade 1)
- Built-in Variable Over Current Limit Function
- Built-in Variable Over Current Mask Time Setting Function.
- Built-in Open Load Detection Function.
- Built-in Under Voltage Lockout Function (UVLO)
- Built-in Diagnostic Output
- Low On-Resistance RON = 45mΩ (Typ)
- Monolithic Power Management IC with Control Unit (CMOS) and Power MOSFET on a Single Chip
- Low Voltage Operation (VBB = 4.3V)
