BM6GD11BFJ-LB (新產品)
Isolation Voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation for GaN HEMT
BM6GD11BFJ-LB (新產品)
Isolation Voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation for GaN HEMT
This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BM6GD11BFJ-LB is a 1-channel gate driver with built-in isolation, capable of driving GaN HEMTs at high speeds. It has an isolation voltage of2500 Vrms, a maximum input/output delay time of 60ns, and a minimum input pulse width of 65ns. The output driver pins on the source and sink sides are separated. These pins generate a switching waveform with slew rate at the rising and falling edges individually adjusted by inserting a resistor between the gate pins of the GaN HEMT. In addition, an under-voltage lockout function (UVLO) is built into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively.
Product Detail
規格:
Configuration
High-side,Low-side,Half-bridge
Isolation Type
Isolated
Isolation Voltage[Vrms]
2500
Channel
1
Vcc1(Min.)[V]
4.5
Vcc1(Max.)[V]
5.5
Vcc2(Min.)[V]
4.5
Vcc2(Max.)[V]
6
I/O Delay Time(Max.)[ns]
Rise=8ns(typ)/ Fall=8ns(typ)
Min. Input Pulse Width[ns]
65
CMTI (Min.)[kV/μs]
150
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Temperature Monitor
No
Package Size [mm]
4.9x6.0 (t=1.65)
功能:
- Built-in Galvanic Isolation
- Under-voltage Lockout Function
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