RW4E065GN
N溝道 30V 6.5A, HEML1616L7, 功率MOSFET
RW4E065GN
N溝道 30V 6.5A, HEML1616L7, 功率MOSFET
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Description
RW4E065GN是一款具有低導通電阻的功率MOSFET，適用於開關應用。
Product Detail
Specifications
Package Code
DFN1616-7T
Number of terminal
7
Polarity
N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
6.5
RDS(on)[Ω] VGS=4.5V(Typ)
0.0251
RDS(on)[Ω] VGS=10V(Typ)
0.0182
RDS(on)[Ω] VGS=Drive (Typ)
0.0251
Total gate charge Qg[nC]
2.1
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
1.6x1.6 (t=0.63)
Features
- 低導通電阻
- 高功率小型模組封裝 (HEML1616L7)
- Pb-free lead plating ; 符合RoHS標準
- 無鹵素
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