RUC002N05
1.2V驅動N溝道MOSFETDescription
MOSFET採用微處理技術，導通電阻極低，適用於低功耗的行動裝置。產品陣容齊全，包含小型、大功率和複合型，以滿足市場需求。
Product Detail
Specifications
Package Code
TO-236AB (SOT-23)
Number of terminal
3
Polarity
N
Drain-Source Voltage VDSS[V]
50
Drain Current ID[A]
0.2
RDS(on)[Ω] VGS=1.2V(Typ)
2.4
RDS(on)[Ω] VGS=1.5V(Typ)
2
RDS(on)[Ω] VGS=2.5V(Typ)
1.7
RDS(on)[Ω] VGS=4.5V(Typ)
1.6
RDS(on)[Ω] VGS=Drive (Typ)
2.4
Power Dissipation (PD)[W]
0.2
Drive Voltage[V]
1.2
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.4x2.9 (t=1.2)
Features
· 低電壓 (1.2V) 驅動型· N溝道小訊號MOSFET
· 小型表面貼裝封裝
· 無鉛/符合RoHS
