4V Drive Nch MOSFET - RSJ650N10
場效電晶體MOSFET。透過高階製程技術並針對行動裝置開發出具有低導通電阻特性的低耗電功率MOSFET。依據不同的用途，我們也提供小型、高功率和複合品等豐富的產品線，以應市場需求。
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規格:
Grade
Standard
Package Code
TO-263 (D2PAK)
JEITA Package
SC-83
Package Size[mm]
10.1x13.1 (t=4.5)
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
100
Drain Current ID[A]
65.0
RDS(on)[Ω] VGS=4V(Typ.)
0.007
RDS(on)[Ω] VGS=10V(Typ.)
0.0065
RDS(on)[Ω] VGS=Drive (Typ.)
0.007
Total gate charge Qg[nC]
260.0
Power Dissipation (PD)[W]
100.0
Drive Voltage[V]
4.0
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150