RS6G120CH
N溝道 40V 300A, HSOP8, Power MOSFET
RS6G120CH
N溝道 40V 300A, HSOP8, Power MOSFET
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Description
RS6G120CH是具備低導通電阻及高功率封裝的Power MOSFET,適用於開關、馬達驅動、DC/DC轉換器。
Product Detail
Specifications
Package Code
HSOP8
Applications
Switching
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
40
Drain Current ID[A]
300
RDS(on)[Ω] VGS=6V(Typ)
0.00125
RDS(on)[Ω] VGS=10V(Typ)
0.00078
RDS(on)[Ω] VGS=Drive (Typ)
0.00125
Total gate charge Qg[nC]
44
Power Dissipation (PD)[W]
166
Drive Voltage[V]
6
trr (Typ.)[ns]
70
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
175
Package Size [mm]
6.0x4.9 (t=1.1)
Features
- 低導通電阻
- 高功率封裝 (HSOP8)
- 無鉛電鍍製程; 符合RoHS指令
- 無鹵素
- 100% Rg與UIS測試
Reference Design / Evaluation Tool
-

- Reference Design - REF68021
- 1.3kW Half-Bridge LLC Evaluation Board
The HBLLC-TSB-001 is a 1.3 kW half-bridge LLC resonant converter test board designed for applications such as data-center server power supplies, BBUs, and industrial equipment. Operating from a 390 V DC input, it delivers a 12 V output with a maximum current of 108 A. The board is equipped with 4th-generation SJ-MOSFETs on the primary side and 7th-generation synchronous rectification (SR) MOSFETs on the secondary side, achieving a peak efficiency of 97.0%.
*This design is provided for reference purposes only.