RS1G120MN
N溝道 40V 34A 功率MOSFET
Description
功率MOSFET採用微處理技術,可作為低導通電阻元件,適用於廣泛的應用。產品陣容廣泛,涵蓋緊湊型、大功率型和複雜型,可滿足市場上的各種需求。
Product Detail
Specifications
Package Code
HSOP8
Applications
Switching
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
40
Drain Current ID[A]
34
RDS(on)[Ω] VGS=4.5V(Typ)
0.0156
RDS(on)[Ω] VGS=10V(Typ)
0.0116
RDS(on)[Ω] VGS=Drive (Typ)
0.0156
Total gate charge Qg[nC]
4.4
Power Dissipation (PD)[W]
25
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
6.0x5.0 (t=1.1)
Features
- 低導通電阻
- 大功率封裝 (HSOP8)
- 無鉛鍍層;符合RoHS指令
- 無鹵素
- 100% Rg及UIS測試