RS1E280GN
4.5V驅動N溝道MOSFET
Description
功率MOSFET透過微處理技術可作為低導通電阻元件,適用於廣泛的應用。我們提供從輕薄短小到高功率和複合型等多種型號的產品陣容,以滿足市場的各種需求。
Product Detail
Specifications
Package Code
HSOP8
Applications
Power Supply
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
80
RDS(on)[Ω] VGS=4.5V(Typ)
0.0026
RDS(on)[Ω] VGS=10V(Typ)
0.002
RDS(on)[Ω] VGS=Drive (Typ)
0.0026
Total gate charge Qg[nC]
17.1
Power Dissipation (PD)[W]
31
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4508
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
6.0x5.0 (t=1.1)
Features
- 低導通電阻
- 大功率封裝 (HSOP8)
- 無鉛電鍍;符合RoHS標準
- 無鹵素
- 100% Rg和UIS測試