RS1E200GN
N溝道30V 57A 功率MOSFET
RS1E200GN
N溝道30V 57A 功率MOSFET
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Description
功率MOSFET是運用微處理技術製成低導通電阻元件,適用於廣泛的應用。產品陣容豐富,涵蓋小型、大功率和複合型,可滿足市場的各種需求。
Product Detail
Specifications
Package Code
HSOP8
Applications
Power Supply
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
57
RDS(on)[Ω] VGS=4.5V(Typ)
0.0047
RDS(on)[Ω] VGS=10V(Typ)
0.0036
RDS(on)[Ω] VGS=Drive (Typ)
0.0047
Total gate charge Qg[nC]
7.8
Power Dissipation (PD)[W]
25
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4509
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
6.0x5.0 (t=1.1)
Features
- 低導通電阻
- 高功率封裝 (HSOP8)
- 無鉛引腳電鍍;符合RoHS標準
- 無鹵素
- 100% Rg和UIS測試