Models
- RS1E170GN SPICE Model
- RS1E170GN Thermal Model (lib)
Characteristics Data
- RS1E170GN ESD Data
場效應電晶體MOSFET。通過採用細微化製程的“超低導通電阻元件”,為用戶提供應用廣泛的功率MOSFET。根據用途備有可實現小型、高功率、複合化的豐富產品陣容,可滿足多樣的市場需求。
Grade
Standard
Package Code
HSOP8S (5x6)
Package Size[mm]
5.0x6.0 (t=1.0)
Applications
Power Supply
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
40.0
RDS(on)[Ω] VGS=4.5V(Typ.)
0.0067
RDS(on)[Ω] VGS=10V(Typ.)
0.0051
RDS(on)[Ω] VGS=Drive (Typ.)
0.0067
Total gate charge Qg[nC]
5.9
Power Dissipation (PD)[W]
23.0
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4501
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150