RQ3E150BN
N溝道30V 39A功率MOSFET
RQ3E150BN
N溝道30V 39A功率MOSFET
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Description
功率MOSFET透過微處理技術製造為低導通電阻元件,適用於廣泛的應用。產品陣容廣泛,涵蓋緊湊型、大功率型和複合型,以滿足市場的各種需求。
Product Detail
Specifications
Package Code
HSMT8
Applications
Switching, Motor
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
39
RDS(on)[Ω] VGS=4.5V(Typ)
0.0053
RDS(on)[Ω] VGS=10V(Typ)
0.0038
RDS(on)[Ω] VGS=Drive (Typ)
0.0053
Total gate charge Qg[nC]
23
Power Dissipation (PD)[W]
17
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4013
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
Features
- 低導通電阻。
- 高功率封裝 (HSMT8)
- 無鉛電鍍;符合RoHS指令。
- 無鹵素