RQ3E120BN
N溝道30V 21A 功率MOSFET
RQ3E120BN
N溝道30V 21A 功率MOSFET
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Description
高功率封裝RQ3E120BN是一款用於開關應用的中功率MOSFET。
Product Detail
Specifications
Package Code
HSMT8
Applications
Switching, Motor
Number of terminal
8
Polarity
N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
21
RDS(on)[Ω] VGS=4.5V(Typ)
0.0086
RDS(on)[Ω] VGS=10V(Typ)
0.0066
RDS(on)[Ω] VGS=Drive (Typ)
0.0086
Total gate charge Qg[nC]
14
Power Dissipation (PD)[W]
16
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4012
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
Features
- 低導通電阻。
- 高功率封裝 (HSMT8)
- 無鉛電鍍；符合RoHS標準。
- 無鹵素
