RJ1N10BBH
N-channel 80V 235A, TO-263AB, 功率MOSFET
RJ1N10BBH
N-channel 80V 235A, TO-263AB, 功率MOSFET
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Description
RJ1N10BBH是低導通電阻和高功率封裝的功率MOSFET,適用於開關、馬達驅動和DC-DC轉換器。
Product Detail
Specifications
Package Code
TO-263AB
Applications
Switching
Number of terminal
3
Polarity
N
Drain-Source Voltage VDSS[V]
80
Drain Current ID[A]
235
RDS(on)[Ω] VGS=6V(Typ)
0.00191
RDS(on)[Ω] VGS=10V(Typ)
0.00166
RDS(on)[Ω] VGS=Drive (Typ)
0.00191
Total gate charge Qg[nC]
120
Power Dissipation (PD)[W]
189
Drive Voltage[V]
6
trr (Typ.)[ns]
92
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
15.1×10.11 (t=4.77)
Features
- 低導通電阻
- 高功率模壓封裝 (TO263AB)
- 無鉛電鍍;符合RoHS
- 無鹵素
- 100% Rg和UIS測試