4.5V驅動型Nch MOSFET - RF4E080GN
場效應電晶體MOSFET。通過採用微細製程的“超低導通電阻元件”，為用戶提供應用廣泛的功率MOSFET。根據用途備有小型、大功率、複合化的豐富產品陣容，可滿足多樣的市場需求。
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規格:
Grade
Standard
Package Code
DFN2020-8S
Package Size[mm]
2.0x2.0 (t=0.6)
Applications
Power Supply
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
8.0
RDS(on)[Ω] VGS=4.5V(Typ.)
0.0176
RDS(on)[Ω] VGS=10V(Typ.)
0.0135
RDS(on)[Ω] VGS=Drive (Typ.)
0.0176
Total gate charge Qg[nC]
2.8
Power Dissipation (PD)[W]
2.0
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4513
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
功能:
・ Low on - resistance.・ High Power Small Mold Package (HUML2020L8).
・ Pb-free lead plating ; RoHS compliant
・ Halogen Free