UM6J1N
4V驅動雙P溝道MOSFET
UM6J1N
4V驅動雙P溝道MOSFET
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Description
複合型MOSFET(P+P)透過微處理技術製成低導通電阻元件,適用於廣泛的應用。我們提供從小型到高功率,以及多種類型的複合型產品,陣容廣泛,滿足市場的各種需求。
Product Detail
Specifications
Package Code
SOT-363
JEITA Package
SC-88
Number of terminal
6
Polarity
P+P
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-0.2
RDS(on)[Ω] VGS=4V(Typ)
1.6
RDS(on)[Ω] VGS=4.5V(Typ)
1.4
RDS(on)[Ω] VGS=10V(Typ)
0.9
RDS(on)[Ω] VGS=Drive (Typ)
1.6
Power Dissipation (PD)[W]
0.15
Drive Voltage[V]
-4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
2.1x2.0 (t=0.9)
Features
· 4V驅動類型· 雙P溝道小訊號MOSFET
· 小型表面貼裝封裝
· 無鉛/符合RoHS