SH8K11
4V驅動雙N溝道MOSFET
SH8K11
4V驅動雙N溝道MOSFET
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Description
N+N複合型MOSFET利用微處理技術,開發出低導通電阻元器件,適用於廣泛的應用。提供緊湊型、高功率型、複合型等廣泛的產品線,可滿足市場的各種需求。
Product Detail
Specifications
Package Code
SOP8
Applications
Switching
Number of terminal
8
Polarity
N+N
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
3.5
RDS(on)[Ω] VGS=4V(Typ)
0.1
RDS(on)[Ω] VGS=4.5V(Typ)
0.09
RDS(on)[Ω] VGS=10V(Typ)
0.07
RDS(on)[Ω] VGS=Drive (Typ)
0.1
Total gate charge Qg[nC]
1.9
Power Dissipation (PD)[W]
2
Drive Voltage[V]
4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
6.0x5.0 (t=1.75)
Features
· 4V驅動型· 雙N溝道中功率MOSFET
· 高速切換
· 小型表面安裝封裝
· 無鉛/符合RoHS規範