SH8J62
4V驅動雙P溝道MOSFET
SH8J62
4V驅動雙P溝道MOSFET
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Description
複合型MOSFET(P+P)採用微處理技術,可作為低導通電阻元件,適用於廣泛的應用。產品陣容廣泛,涵蓋緊湊型、大功率型和複合型,以滿足市場的各種需求。
Product Detail
Specifications
Package Code
SOP8
Applications
Power Supply
Number of terminal
8
Polarity
P+P
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-4.5
RDS(on)[Ω] VGS=4V(Typ)
0.06
RDS(on)[Ω] VGS=4.5V(Typ)
0.055
RDS(on)[Ω] VGS=10V(Typ)
0.04
RDS(on)[Ω] VGS=Drive (Typ)
0.06
Total gate charge Qg[nC]
8
Power Dissipation (PD)[W]
2
Drive Voltage[V]
-4
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
6.0x5.0 (t=1.75)
Features
· 4V驅動型· 雙P溝道中功率MOSFET
· 高速開關
· 小型表面貼裝封裝
· 無鉛/符合RoHS標準