Models
- QS8J4 SPICE Model
- QS8J4 Thermal Model (lib)
Characteristics Data
- ESD Data
場效電晶體MOSFET。整合2個Pch MOSFET元件。透過高階製程技術並針對行動裝置開發出具有低導通電阻特性的低耗電功率MOSFET。依據不同的用途,我們也提供小型、高功率和複合品等豐富的產品線,以應市場需求。
Grade
Standard
Package Code
TSMT8
Package Size[mm]
3.0x2.8 (t=0.8)
Applications
Power Supply
Number of terminal
8
Polarity
Pch+Pch
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-4.0
RDS(on)[Ω] VGS=4V(Typ.)
0.06
RDS(on)[Ω] VGS=4.5V(Typ.)
0.055
RDS(on)[Ω] VGS=10V(Typ.)
0.04
RDS(on)[Ω] VGS=Drive (Typ.)
0.06
Total gate charge Qg[nC]
8.4
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
-4.0
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150