低雜訊規格 Nch 650V 30A 功率MOSFET - R6530ENZ (新產品)
R6xxxENx系列是重視易用性，以低雜訊性能為特點的Super Junction MOSFET產品。該系列產品可在音響和照明等需要盡可能抑制雜訊的應用中實現最佳性能。
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規格:
Grade
Standard
Package Code
TO-3PF
Package Size[mm]
26.5x15.5 (t=5.5)
Applications
Power Supply
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
650
Drain Current ID[A]
30.0
RDS(on)[Ω] VGS=10V(Typ.)
0.125
RDS(on)[Ω] VGS=Drive (Typ.)
0.125
Total gate charge Qg[nC]
90.0
Power Dissipation (PD)[W]
86.0
Drive Voltage[V]
10.0
Trr (Typ.)[ns]
640
Mounting Style
Leaded type
Bare Die Part Number
Available: K7457
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
功能:
- Low on-resistance
- Fast switching speed
- Parallel use is easy
- Pb-free plating ; RoHS compliant