R6509ENJ
650V 9A TO-263，低雜訊功率MOSFET
新設計不推薦
R6509ENJ
650V 9A TO-263，低雜訊功率MOSFET
Quick Download
Description
為了既有客戶所需而生產的產品。對於新設計則不予販售。
Product Detail
Specifications Data Sheet
Package Code
TO-263 (D2PAK)
JEITA Package
SC-83
Applications
Power Supply
Number of terminal
3
Polarity
N
Drain-Source Voltage VDSS[V]
650
Drain Current ID[A]
9
RDS(on)[Ω] VGS=10V(Typ)
0.53
RDS(on)[Ω] VGS=Drive (Typ)
0.53
Total gate charge Qg[nC]
24
Power Dissipation (PD)[W]
94
Drive Voltage[V]
10
trr (Typ.)[ns]
400
Mounting Style
Surface mount
Bare Die Part Number
Available: K7459
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
13.1x10.1 (t=4.7)
Features
- 低導通電阻
- 高速切換
- 易於並聯使用
- 無鉛電鍍; 符合RoHS標準
