10V驅動型 Nch MOSFET - R6009ENJ
場效電晶體的MOSFET。ROHM提供微細化製程的「超低導通電阻元件」並可應用在大範圍領域的功率MOSFET。並可依用途推出符合小型・高功率・複合化的多樣產品陣容對應市場上的各種需求。
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規格:
Grade
Standard
Package Code
TO-263 (D2PAK)
JEITA Package
SC-83
Package Size[mm]
10.1x13.1 (t=4.5)
Applications
Power Supply
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
600
Drain Current ID[A]
9.0
RDS(on)[Ω] VGS=10V(Typ.)
0.5
RDS(on)[Ω] VGS=Drive (Typ.)
0.5
Total gate charge Qg[nC]
23.0
Power Dissipation (PD)[W]
40.0
Drive Voltage[V]
10.0
Trr (Typ.)[ns]
380
Mounting Style
Surface mount
Bare Die Part Number
Available: K7409
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
功能:
- Low on-resistance
- Fast switching speed
- Gate-source voltage (VGSS) guaranteed to be ±20V
- Drive circuits can be simple
- Parallel use is easy
- Pb-free lead plating ; RoHS compliant