SG6612WN
短路耐受時間 5µs, 650V 50A, IGBT裸芯片
SG6612WN
SG6612WN
短路耐受時間 5µs, 650V 50A, IGBT裸芯片
應用：通用逆變器、UPS、功率調節器、Welding
關於裸芯片的規格和銷售事宜，請諮詢ROHM銷售部門，目前尚未開始網售。
Product Detail
規格:
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(Nominal) [A] / IF(Nominal) [A]
50
VCE(sat) (Typ.) [V]
1.65
tsc(Min.) [us]
5
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
175
功能:
- Trench Light Punch Through Type
- Low Collector - Emitter Saturation Voltage
- Low Switching Loss
- Short Circuit Withstand Time 5µs
