RGTH80TK65D
高速開關型, 650V 40A, 內建快速回復二極體, TO-3PFM, 場截止溝槽型IGBT
RGTH80TK65D
RGTH80TK65D
高速開關型, 650V 40A, 內建快速回復二極體, TO-3PFM, 場截止溝槽型IGBT
ROHM的IGBT（絕緣閘極型雙極電晶體）產品為廣大的高電壓、大電流應用的高效化和節能化做出了貢獻。
Product Detail
規格:
Series
TH: High speed SW
VCES [V]
650
IC(100°C)[A]
19
VCE(sat) (Typ.) [V]
1.6
tf(Typ.) [ns]
47
Built-in Diode
FRD
Pd [W]
66
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
21.0x16.0 (t=5.2)
功能:
- Low Collector-Emitter Saturation Voltage
- High Speed Switching
- Low Switching Loss & Soft Switching
- Built in Very Fast & Soft Recovery FRD (RFN-Series)
- Pb-free Lead Plating; RoHS Compliant
