RGT16NS65D(TO-262)
短路耐量 5µs, 650V 8A, 內建快速回復二極體, TO-262, 場截止溝槽型IGBT
RGT16NS65D(TO-262)
短路耐量 5µs, 650V 8A, 內建快速回復二極體, TO-262, 場截止溝槽型IGBT
ROHM的IGBT(絕緣閘極型雙極電晶體)產品、協助大範圍高電壓・大電流應用的高效率化與節能。
Product Detail
規格:
Series
T: For inverter (tsc 5µs)
VCES [V]
650
IC(100°C)[A]
8
VCE(sat) (Typ.) [V]
1.65
tf(Typ.) [ns]
95
tsc(Min.) [us]
5
Built-in Diode
FRD
Pd [W]
94
BVCES (Min.)[V]
650
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
9.0x10.1 (t=4.7)
功能:
1) Low Collector - Emitter Saturation Voltage2) Low Switching Loss
3) Short Circuit Withstand Time 5us
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
