GNE1040TB
EcoGaN™, 150V 10A DFN5060, E-mode GaN HEMT
GNE1040TB
EcoGaN™, 150V 10A DFN5060, E-mode GaN HEMT
GNE1040TB是柵極耐壓高達8V的150V GaN HEMT。該產品屬於EcoGaN™系列，該系列產品通過更大程度地激發低導通電阻和高速開關性能，助力應用產品更節能和小型化。 GNE1040TB的電源效率在1MHz的高頻段也高達96.5%以上。另外，該產品採用支持大電流且具有出色散熱性的通用型DFN封裝，這使得安裝工序的操作更容易。 Looking for the Gate Driver inspiring GaN HEMT performance? → GaN用閘極驅動器
本產品不建議使用的車載設備。
Product Detail
規格:
VDS [V]
150
IDS [A]
10
VGS Rating [V]
8
RDS(on) [mΩ]
40
Qg [nC]
2
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
5.0x6.0 (t=1.0)
功能:
- E-mode
- Reliable and easy to use with DFN package
- High gate voltage maximum rating 8V
- Very high switching frequency
參考設計 / 應用評估套件
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- Reference Design - REFLD002
- Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .
- Enables high-speed driving of laser diodes - a key device in LiDAR applications
- Includes next-gen EcoGaN™ devices
- Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
- Two circuit types: square wave and resonant
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