GNE1008TB (開發中)

EcoGaN™, 150V 30A DFN5060, E-mode Gallium-Nitride(GaN) HEMT

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GNE1008TB

(開發中)

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GNE1008TB (開發中)
EcoGaN™, 150V 30A DFN5060, E-mode Gallium-Nitride(GaN) HEMT

GNE1008TB 是一款具有8V 柵極電壓的150V GaN HEMT，屬於EcoGaN™系列產品，利用該系列產品的低導通電阻和高速開關的特性，有助於提高功率轉換效率並減小產品尺寸；即使在1MHz的高頻段，電源效率也可達到96.5%以上。另外，通過採用通用性高的DFN封裝，不僅散熱性能出色，還非常易於安裝。

Looking for the Gate Driver inspiring GaN HEMT performance? → GaN用閘極驅動器

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* 本產品是標準級的產品。
本產品不建議使用的車載設備。

Data Sheet 購買

Product Detail

料號 | GNE1008TB

狀態 | 開發中

封裝 | DFN5060

包裝形式 | Taping

單位數量 | 2500

最小包裝數量 | 2500

RoHS | Yes

規格:

V_DS [V]

150

I_DS [A]

V_GS Rating [V]

R_DS(on) [mΩ]

8.5

Qg [nC]

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Dimensions [mm]

5.0x6.0 (t=1.0)

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功能:

E-mode
Reliable and easy to use with DFN package
High gate voltage maximum rating 8V
Very high switching frequency

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Type	Title	Last Updated
Data Sheet	GNE1008TB Data Sheet	2023/07/14
Application Note	Types and Features of Transistors	2024/07/05

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GNE1008TB (開發中)

GNE1008TB (開發中)
EcoGaN™, 150V 30A DFN5060, E-mode Gallium-Nitride(GaN) HEMT

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