BM3G005MUV-LB
Nano Cap™、EcoGaN™、650V 50mΩ 2MHz、GaN HEMT Power Stage IC
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BM3G005MUV-LB
Nano Cap™、EcoGaN™、650V 50mΩ 2MHz、GaN HEMT Power Stage IC
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Description
指正在申請中止製造的產品。
Product Detail
Specifications Data Sheet
Vin (Min.)[V]
-0.6
Vin (Max.)[V]
30
Operating Current@500 kHz(Typ) [mA]
2.2
Quiescent Current (Typ) [μA]
180
Switching Frequency(Max)[MHz]
2
Turn-on Delay Time(Typ)[ns]
14
Turn-off Delay Time(Typ)[ns]
19
Temperature (Min.)[°C]
-40
Temperature (Max.)[°C]
105
ON State Resistance(Typ)[mΩ]
50
Package Size [mm]
8.0x8.0 (t=1.0)
Application
Networking, Server
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Min.)[°C]
150
Features
- Nano Cap™ 整合 5V LDO
- VDD 引腳電壓的工作範圍廣
- IN 引腳電壓的工作範圍廣
- VDD 靜態和工作電流低
- 傳播延遲低
- 高 dv/dt 抗擾度
- 可調閘極驅動強度
- 電源正常訊號輸出
- VDD 欠壓鎖定保護
- 過熱關機保護
Reference Design / Evaluation Tool
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- Evaluation Board - BM3G005MUV-EVK-003
The BM3G005MUV-EVK-003 evaluation board consists of the BM3G005MUV (GaN FET (650 V 50 mΩ), integrated driver and protection circuit) and A board on which peripheral components are mounted. This IC is designed to adapt major exist controllers, so that it also can be used to replace the traditional discrete power switches, such as super junction MOSFET
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- Evaluation Board - BM85060FV-EVK-001
Totem Pole PFC Controller Output 330W 390V BM85060FV Reference Board
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