RQ3G110AT
P通道 -40V -35A,HSMT8,功率MOSFET
RQ3G110AT
P通道 -40V -35A,HSMT8,功率MOSFET
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Description
RQ3G110AT是一款功率MOSFET,適用於負載開關應用。
Product Detail
Specifications
Package Code
HSMT8
Number of terminal
8
Polarity
P
Drain-Source Voltage VDSS[V]
-40
Drain Current ID[A]
-35
RDS(on)[Ω] VGS=4.5V(Typ)
0.0123
RDS(on)[Ω] VGS=10V(Typ)
0.0098
RDS(on)[Ω] VGS=Drive (Typ)
0.0123
Total gate charge Qg[nC]
46
Power Dissipation (PD)[W]
20
Drive Voltage[V]
-4.5
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
3.3x3.3 (t=0.9)
Features
- 低導通電阻
- 大功率小型模組封裝(HSMT8)
- 無鉛電鍍;符合RoHS指令
- 無鹵素