ROHM Product Detail
新設計不推薦
RQ3G100GN
Nch 40V 10A 功率MOSFET
新設計不推薦
RQ3G100GN
Nch 40V 10A 功率MOSFET
為了既有客戶所需而生產的產品。對於新設計則不予販售。
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Product Detail
RQ3G100GN 的替換產品
Part Number |
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---|---|---|
Ordering Part Number | RQ3G100GNTB | RH6G040BGTB1 |
Similar Level | - | Similar Specification |
Data Sheet | ||
Supply Status | Not Recommended for New Designs | Recommended |
Package | HSMT8 (Single,TB) | HSMT8 (Single,TB1) |
Unit Quantity | 3000 | 3000 |
Minimum Packing Quantity | 3000 | 3000 |
Packing Type | Taping | Taping |
RoHS | Yes | Yes |
Package Code | HSMT8 | HSMT8 |
Package Size [mm] | 3.3x3.3 (t=0.9) | 3.3x3.3 (t=0.9) |
Number of terminal | 8 | 8 |
Polarity | Nch | Nch |
V DSS [V] | 40 | 40 |
I D [A] | 27.0 | 95.0 |
R DS(on) (Typ) @4.5V[O] | 0.0141 | 0.0047 |
R DS(on) (Typ) @10V[O] | 0.011 | 0.0028 |
R DS(on) (Typ) @Drive[O] | 0.0141 | 0.0047 |
Drive Voltage [V] | 4.5 | 4.5 |
Power Dissipation (PD) [W] | 15.0 | 59.0 |
Q g (Typ)[nC] | 4.3 | 12.5 |
Mounting Style | Surface mount | Surface mount |
Applications | Power Supply | - |
Storage Temperature (Min)[?] | -55 | -55 |
Storage Temperature (Max)[?] | 150 | 150 |

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Low ON-Resistance Nch Power MOSFETs RS6/RH6 Series
2023-05-15 00:00:00.0
( 2:09 )
These products utilize ROHM’s latest generation fine element structure that significantly reduces ON resistance per unit area.
These products utilize ROHM’s latest generation fine element structure that significantly reduces ON resistance per unit area.
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