RJ1P04BBH
N溝道100V 80A, TO-263AB, 功率MOSFET
RJ1P04BBH
N溝道100V 80A, TO-263AB, 功率MOSFET
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Description
RJ1P04BBH是低導通電阻、高功率小尺寸模壓封裝的功率MOSFET,適用於開關應用。
Product Detail
Specifications
Package Code
TO-263AB
Applications
Switching
Number of terminal
3
Polarity
N
Drain-Source Voltage VDSS[V]
100
Drain Current ID[A]
80
RDS(on)[Ω] VGS=6V(Typ)
0.0084
RDS(on)[Ω] VGS=10V(Typ)
0.0068
RDS(on)[Ω] VGS=Drive (Typ)
0.0084
Total gate charge Qg[nC]
25
Power Dissipation (PD)[W]
89
Drive Voltage[V]
6
trr (Typ.)[ns]
63
Mounting Style
Surface mount
Storage Temperature (Min)[℃]
-55
Storage Temperature (Max)[℃]
150
Package Size [mm]
15.1×10.11 (t=4.77)
Features
- 低導通電阻
- 高功率小型模組封裝(TO263AB)
- 無鉛電鍍;符合RoHS標準
- 100% UIS測試