US5U30
2.5V Drive Pch+SBD MOSFET
US5U30
US5U30
2.5V Drive Pch+SBD MOSFET
場效電晶體MOSFET。將採用高階製程技術的低導通電阻MOSFET與蕭特基二極體(SBD)做結合，豐富的產品線以回應各市場需求。
Product Detail
規格:
Package Code
SOT-353T
JEITA Package
SC-113CA
Number of terminal
5
Polarity
Pch+Schottky
Drain-Source Voltage VDSS[V]
-20
Drain Current ID[A]
-1
RDS(on)[Ω] VGS=2.5V(Typ.)
0.57
RDS(on)[Ω] VGS=4V(Typ.)
0.31
RDS(on)[Ω] VGS=4.5V(Typ.)
0.28
RDS(on)[Ω] VGS=Drive (Typ.)
0.57
Total gate charge Qg[nC]
2.1
Power Dissipation (PD)[W]
0.7
Drive Voltage[V]
-2.5
Reverse voltage VR (Diode) [V]
20
Forward Current IF (Diode) [A]
0.5
Forward Current Surge Peak IFSM (Diode) [A]
2
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
2x2.1 (t=0.85)
